Localized silicon etching using a laserhyphen;generated Cl source

摘要

Ultraviolet laser photolysis of chlorine (lgr;=350ndash;360 nm) has been used to produce a microscopic atomic chlorine source. Crystalline silicon has been etched and deep throughhyphen;wafer vias have been fabricated. The etching process has been modeled as a combination of diffusion from the Cl source, and recombination and etching at the silicon surface. Both experimental and theoretical results are given.