Effect of phosphorus and boron impurities on amorphous silicon solar cells

摘要

The effect of dopant impurities (P,B) on the performance of sputtered agr;hyphen;SiHxsolar cells has been investigated. We find, for example, that during the deposition of the N+layer of N+hyphen;Ihyphen;Pt Schottky barrier structures, the chamber is contaminated with phosphorous which subsequently degrades the intrinsic film. This effect may be eliminated by prolonged pumping of the chamber between N+and I layer depositions or by rsquo;rsquo;compensatingrsquo;rsquo; the effects of phosphorous in the I layer through the intentional addition of low levels of boron.