Use of a scanning cw Kr laser to obtain diffusionhyphen;free annealing of Bhyphen;implanted silicon

摘要

The use of a continuous scanned Kr ion laser as a tool for annealing of boronhyphen;implanted silicon is described. Conditions were found that produce high electrical activity and crystallinity of the implanted layer without redistribution of the boron from the ashyphen;implanted profile.