Metal-ferroelectric-insulator-semiconductor (MFIS) devices using rapid thermal annealed (RTA) LiNbO{sub}3/AlN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor (MIS) C-V properties using high dielectric AlN thin films showed no hysteresis and good interface. The dielectric constant of the AlN film calculated from the capacitance at the accumulation region in the capacitance-voltage (C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO{sub}3 thin films. The typical dielectric constant value of LiNbO{sub}3 film in MFIS device was about 23. The memory window width was about 1.2V in the gate voltage range of ±5 V. Typical gate leakage current density of the MFIS structure was the of order of 10{sup}(-9) A/cm{sup}2 at the range of within ±500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10{sup}11 switching cycles when subjected to symmetric bipolar voltage pulses (peak-to-peak 8V, 50 duty cycle) of 500kHz.
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