Theory of resonant scattering in semiconductors due to impurity centralhyphen;cell potentials

摘要

Electron scattering by the centralhyphen;cell defect potential of a substitutionalsp3hyphen;bonded impurity or vacancy in a zincblende host is considered. Significant scattering of electrons can occur if a rsquo;rsquo;deep resonancersquo;rsquo; lies slightly above the conductionhyphen;band edge. The theory is applied to scattering of electrons by defects in GaAs.