Hydrogenation of GaN, AlN, and InN

摘要

Hydrogen incorporation depths of ge;1 mgr;m are measured for2H plasma exposure of GaN and AlN at 250ndash;400thinsp;deg;C for 30 min. The concentration of2H incorporated is in the range 5ndash;10times;1017cmminus;3for GaN and 5ndash;30times;1018cmminus;3for AlN under these conditions. No redistribution of the hydrogen is observed for annealing temperatures up to 800thinsp;deg;C, but at 900thinsp;deg;C there is substantial loss of hydrogen from the samples. Similar results are obtained for2H implantation into GaN, AlN, and InN, with no significant redistribution observed up to 500ndash;600thinsp;deg;C in either AlN or InN, and motion only at 900thinsp;deg;C in GaN. The thermal stability of hydrogen in IIIhyphen;V nitrides explains previous results for Mghyphen;doped GaN grown using NH3, where posthyphen;growth annealing at high temperatures was required to achieve appreciable doping efficiencies.