On the n~+ -GaAs /δ(p~+)-GalnP/n-GaAs high breakdown voltage field-effect transistor

摘要

A newly designed n+ -GaAs/δ(p+)-GaInP/n-GaAs camel-typefield-effect transistor (CAMFET) with a triple-step doped channel hasbeen successfully fabricated and demonstrated. Experimentally, thehigh gate turn-on voltage of 1.6 V and breakdown voltage of 40 V andthe very low gate leakage current of 400 μA mm~(-1) are obtained forthe studied CAMFET In addition, good transistor properties areobtained. The measured current gain cut-off frequency f_T and themaximum oscillation frequency f_max for a 1 μm gate device are 17and 31 GHz, respectively. Based on experimental results, the studieddevice shows promise for circuit applications.