The light-induced magnetophonon resonance has been observed in thin film samples Pb1-xSnxTe:In at low hole concentrations p(p approximately=2*1016cm-3at 4.2 K). The resonance takes place when the energy difference between the lowest Landau level in the conduction band and the trap level is n times h(cross) omegaLO. Here h(cross) omegaLOis the energy of longitudinal optical phonons and n is an integer. The experimentally observed photoresistivity dependence on magnetic field at a temperature ranging from 3-20 K allows one to determine the energy of the trap level. Further one can predict the value of the electron effective mass and its magnetic field dependence.
展开▼
