We report on the variation of the absorption coefficient agr;fwith wave numberW, for Clhyphen;dopednhyphen;type (9.4times;1016ndash;8times;1018cmminus;3) ZnSe epitaxial films grown on GaAs. Below the classical midhyphen;infrared range ofW, agr;fhas large values (1.6times;103ndash;2.11times;104cmminus;1) appropriate for thinhyphen;film measurements, with agr;fproportional toWminus;p. Large variations of agr;fandpoccur as a function of the freehyphen;electron concentration. The results are compared to a recent theoretical model by Ruda lsqb;J. Appl. Phys.61, 3035 (1987)rsqb;, which is specific to ZnSe.
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