The new advanced technology which can grow the single wall carbon nanotube directly to the silicon tip is applied in the following three devices. 1) The single wall carbon nanotube was used as a sharp AFM cantilever to improve the resolution of AFM image The surface of gold(Au) on the silicon substrate was observed using the carbon nanotube AFM cantilever and conventional AFM cantilever. The size of the observed Au cluster using the conventional AFM cantilever is as large as 50nm, on the other hand, using the carbon nanotube AFM cantilever, 15nm, which is ～4 times improvement of the AFM image resolution. 2) The single wall carbon nanotube with a diameter of 1～2nm was used as a sharp AFM cantilever and anodized the surface of the titanium (Ti) to form the narrow oxidized titanium (TiOx) tunnel junction of ～5nm for the room temperature planar type single electron transistor(SET). The fabricated SET shows the RT Coulomb oscillation. 3) The single wall carbon nanotube was used as an ultra-sharp field emitter. The emitter bas 10 to 20 times smaller diameter than the conventional silicon field emitter formed by the selective etching. The threshold voltage of the field emission for the carbon nanotube field emitter becomes as small as 10V which is 10～50 times smaller than the conventional silicon tip field emitter because of the smaller diameter of the carbon nanotube emitter. This single wall carbon nanotube field emitter could be applicable to the flat panel display of wide view TV or mobile monitor, etc.
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