The development of analytical tools and procedures for process control is a prerequisite for the intergration of high permittivity and/or ferroelectric materials in CMOS devices. The thickness and composition of perovskite oxide films were determined by wavelength dispersive X-ray fluorescence analysis (XRF) with special emphasis on the ratio of the group-II elements to the Ti content, and a precision of 0.5 was achieved for a typical film thickness of 20-30nm. Secondary ion mss spectrometry (SIMS) and sputtered neutrals mass spectrometry (SNMS) was used for depth profiling to determine film homogeneity and elemental interdiffusion at heterointerfaces. Examples are given for Ba_xSr_(1-x)TiO_3 and SrTiO_x thin fims which were grown in a prototype MOCVD production tool. No interdiffusion was observed for films grown at 600 ℃ on Pt electrodes in contrast to films grown directly on Si.
展开▼
