首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >High-Pressure Synthesis, Structure, and Electrical Property of Iodine-Filled Skutterudite I_(0.9)Rh4Sb_(12)-First Anion-Filled Skutterudite
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High-Pressure Synthesis, Structure, and Electrical Property of Iodine-Filled Skutterudite I_(0.9)Rh4Sb_(12)-First Anion-Filled Skutterudite

机译:碘填充Skutterudite I_(0.9)Rh4Sb_(12)-first阴离子填充Skutterudite的高压合成、结构及电学性能

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摘要

An iodine containing skutterudite compound I_(0.9)Rh4Sb_(12) was prepared by the reaction of the element mixture with an iodine excess composition (I:Rh:Sb = 1.5:4:12) at 5-12 GPa and 850 °C. Rietveld structural analysis revealed that this is the first anion-filled skutterudite crystallizing in the space group I m-3 with a lattice constant of a = 9.29997(6) A. X-ray photoelectron spectroscopy proved the oxidation state of iodine to be I-. The compound is semimetallic with a resistivity of 9.9 mΩcm at 300 K. Band structure and density of states calculations suggested that the bands near the Fermi level are mainly composed of Rh-p, Rh-d, and Sb-p orbitals; the contribution of iodine is not large.
机译:在5-12 GPa和850 °C下,由元素混合物与碘过量组合物(I:Rh:Sb = 1.5:4:12)反应制备了含碘的Skutterudite化合物I_(0.9)Rh4Sb_(12)。 Rietveld结构分析表明,这是第一个在空间群I m-3中结晶的阴离子填充skutterudite,晶格常数为a = 9.29997(6) A.X射线光电子能谱证明碘的氧化态为I-。该化合物为半金属,在300 K时电阻率为9.9 mΩcm。 能带结构和态密度计算表明,费米能级附近的能带主要由Rh-p、Rh-d和Sb-p轨道组成;碘的贡献不大。

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