MICROSTRUCTURAL EFFECTS ON THE MINORITYhyphen;CARRIER DIFFUSION LENGTH IN EPITAXIAL GaAs

摘要

Homohyphen; and heteroepitaxial layers of GaAs were examined by transmission electron microscopy. The epitaxial layers contained four types of defects. These were intrinsic stacking faults, extrinsic faulted loops, dislocations, and precipitates. It is shown that, of these defects, the ones most responsible for limiting the minorityhyphen;carrier diffusion length are stacking faults.