GaInAsP/InP lasers made by lowhyphen;pressure metalorganic vapor phase epitaxy regrowth on patterned surfaces exhibit yield and performance dependent on laser stripe orientation. Structures with stripes parallel to the lang;011rang; and lang;01macr;1rang; directions are investigated by secondary ion mass spectroscopy (SIMS). Threehyphen;dimensional SIMS profiles taken with high horizontal resolution using the checkerboard matrix gate technique yield unexpected results for structures with stripes parallel to the lang;01macr;1rang; direction: phosphorus is found in the nominal GaInAs layer, its distribution is strongly inhomogeneous. Zn diffused into the GaInAs layer exhibits also pronounced spatial variations. Unwanted P outdiffusion and anomalous Zn diffusion are attributed to reduced crystalline perfection of the InP above lang;01macr;1rang; oriented laser stripes.
展开▼
