Role of heavyhyphen;hole states in interband tunnel structures

摘要

We report on the first calculation of transport in InAs/GaSb/AlSbhyphen;based interband tunnel structures which uses a realistic band structure model. The results are compared with calculations using a twohyphen;band model which includes only the lowest conduction band and the lighthyphen;hole band. It is found that heavyhyphen;hole states can introduce substantial holehyphen;mixing effects in device structures containing GaSb quantum wells, and should have a significant influence on currenthyphen;voltage characteristics interband devices.