Mechanism for ionhyphen;induced mixing of GaAshyphen;AlGaAs interfaces by rapid thermal annealing

摘要

A mechanism for the transienthyphen;enhanced interdiffusion of GaAshyphen;AlGaAs interfaces during rapid thermal annealing of ionhyphen;implanted heterostructures is proposed. The model is based on the solution of the coupled diffusion equations involving the excess vacancies and the posthyphen;implantation Al distribution following ion implantation. Both initial distributions are obtained from the solution of a threehyphen;dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. In general, the model is valid for time frames within which impurity diffusion does not occur appreciably so that impurityhyphen;enhanced diffusion remains a weak effect.