Development of a RF bipolar transistor in a standard 0.35μm CMOS technology

摘要

A RF Bipolar Transistor integrated to a standard 0.35μm CMOS process is presented. This BiCMOS technology features a single-poly NPN transistor with simulated performance of f{sub}T = 16GHz and BV{sub}(CEO) = 6.4V. With implanted base and no trench isolation, this device offers full compatibility with standard CMOS technology at the cost of three additional mask layers, while demonstrates good performance compared to previously published BiCMOS technologies.