The exciton-phonon system in GaAs-GaSUB1-x/SUBAlSUBx/SUBAs quantum wells

摘要

The binding energies of light- and heavy-hole exciton-phonon systems in GaAs-Ga1-xAlxAs quantum wells are calculated as a function of the well thickness for several values of the heights of the potential barriers. A comparison between these results and recent experimental measurements is presented.