Fabrication of cosputtered Zn-In-Sn-O films and their applications to organic light-emitting diodes

摘要

Zn-In-Sn-O (ZITO) films have been grown by rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto glass substrate. X-ray diffraction analysis shows that the microstructure is amorphous below the substrate temperature of 250 degrees C. The films exhibit sheet resistance as low as 16.7 Omega/square and optical transparency comparable to grater than that of Sn-doped indium oxide (ITO) films. The work function ranged 5.05-5.19 eV, which is a higher work function compared to TO (4.7 eV). The fabricated ZITO films are used in fabrication of organic light-emitting diodes (OLEDs). The ZITO anode with the zinc content of 12.5 at. Zn/(Zn + In + Sn) fabricated at 250 degrees C-based OLED shows lower turn-on voltage and higher current density compared to that of ITO-based control device.