Aphyphen;njunction is formed for the first time in a crosshyphen;sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor phase epitaxy is employed for the fabrication. Currenthyphen;voltage and capacitancehyphen;voltage characteristics confirm the formation of thephyphen;njunction in a narrow area at the midpoint of a wire crystal. Intensive light emission by current injection is observed at 77 K and even at room temperature. These results suggest that ultrafine optoelectronic devices with quantumhyphen;sizephyphen;njunction are possible.
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