Oxygen precipitation effects on Sin+hyphen;pjunction leakage behavior

摘要

The effects of oxygen precipitation in (100) Si wafers on junction leakage characteristics are investigated for double polysilicon gate fieldhyphen;effect transistor dynamic randomhyphen;access memory technology. Experimental data indicate the presence of a very large bulk diffusion leakage current component in the elevated (gsim;45thinsp;deg;C) temperature range. A simple onehyphen;dimensional minorityhyphen;carrier diffusion model predicts the existence of carrier generation centers at the interface between the precipitatehyphen;free and the precipitated regions in the bulk.