Study on the temperature-independent lasing wavelength semiconductor laser diodes

摘要

In order to fabricate the temperature-insensitive wavelength laser diodes (LDs), which are important in the WDM optical fiber communication system. we have studied the TlInGaAs/InP heterostructures. TlInGaAs/InP metal-stripe LDs were fabricated with gas source MBE. Current injection pulsed laser operation was obtained up to 310K. Threshold current density and lasing wavelength at room temperature were 7 kA/cm{sup}2 and 1660 nm respectively. We have observed the small temperature variation of the peak wavelength of 0.O6nm/K at narrow temperature range. while at wide temperature range it was about 0.3 nm/K. Both values are smaller than those for InGaAsP/InP DFB LDs and Fabry-Perot (EP) LDs. respectively CW operation was also obtained at 77K with a threshold current density of 0.25 kA/cm{sup}2.