ZnCdSe/ZnSe quantum well wires fabricated by reactive ion etching and wet chemical treatment

摘要

ZnCdSe/ZnSe quantum well wires (QWWs) of various lateral size down to 30 nm were fabricated using a combination of reactive ion etching (RIE) and subsequent new type of wet chemical treatment, followed by epitaxial overgrowth. The processing does not lead to any additional inhomogeneous broadening of the QWW photoluminescence (PL) lines, blue shifted due to lateral confinement, and the PL efficiency exhibits no dramatic reduction with decreasing wire width. References: 7