Dynamic Polarization and Relaxation of As-75 Nuclei in Silicon at High Magnetic Field and Low Temperature

摘要

We present the results of experiments on dynamic nuclear polarization and relaxation of As-75 in silicon crystals. Experiments are performed in strong magnetic fields of 4.6 T and temperatures below 1 K. At these conditions donor electron spins are fully polarized, and the allowed and forbidden electron spin resonance transitions are well resolved. We demonstrate effective nuclear polarization of As-75 nuclei via the Overhauser effect on the time scale of several hundred seconds. Excitation of the forbidden transitions leads to a polarization through the solid effect. The relaxation rate of donor nuclei has strong temperature dependence characteristic of Orbach process.