A study of current drift phenomena of InGaAs depletion mode metalhyphen;insulator fieldhyphen;effect transistors fabricated with plasma enhanced chemical vapor deposited Si3N4is reported for the first time. The data indicate that the current varies logarithmically versus time and that the capture mechanism does not depend on temperature. A strong correlation is demonstrated between the amplitude of the hysteresis ofC(V) curves measured on metalhyphen;insulatorhyphen;semiconductor devices and the total oxide thickness located between the deposited dielectric film and the InGaAs layer. This behavior suggests that states situated in this native oxide layer are responsible for the current drift. Moreover, these states are energetically distributed in the band gap of InGaAs.
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