phyphen;channel, strained quantum well, fieldhyphen;effect transistor

摘要

Aphyphen;channel fieldhyphen;effect transistor with a 3.5 mgr;m Cr/Au gate was fabricated from a modulationhyphen;doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Wellhyphen;behaved transistor action was observed at both 300 and 77 K with extrinsic transconductances of 6.2 and 11.3 mS/mm, respectively. Shubnikovndash;deHaas measurements prove the existence of a twohyphen;dimensional hole gas with a strainhyphen;shifted lighthyphen;hole ground state associated with a lighthyphen;hole mass of 0.154m0.