CO2laserhyphen;induced melting of indium antimonide

摘要

Using picosecond CO2laser pulses, the following sequence of events was identified in high power laserhyphen;semiconductor interaction: (i) generation of a dense (gsim;1018cm3) plasma, (ii) melting of the crystal by freehyphen;carrier absorption, (iii) formation of surface ripples at the breakdown threshold, and (iv) formation of a crater at higher intensities. The melting without breakdown region can be quite broad and may have potential applications in semiconductor processing and annealing.