High dielectric (high-k) thin films have attained considerable attention as possible replacements for dielectric insulators of sub-0.1μm MOSFET in future ULSIs. Bulk TiO{sub}2 has higher dielectric constant as compared to another high-k dielectric materials. Thus, TiO{sub}2 is one of the expected high-k dielectric materials. However, leakage current of TiO{sub}2 increased when the grain growth in the crystal becomes to proceed. Silicate could form thermally stable amorphous structure. Therefore, it was thought that silicate is able to overcome these problems. In this study, we have formed titanium-silicate thin films on a Si substrate by metalorganic decomposition (MOD). The crystal structure and the electrical properties of the films were investigated. Titanium silicate films could suppress leakage current caused by grain growth after high thermal annealing.
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