Behaviour of plasma hydrogenated n-type silicon in aqueous fluoride media: comparison with non-hydrogenated silicon

摘要

We investigate the electrochemical behaviour, in the dark, of hydrogenated n-type silicon (n-Si (H)) as function of the plasma hydrogenation duration. We also study the pore size microstructures and the flat band potential (V-fb). The results are compared with non-hydrogenated n-Si. An electrochemical reactionary mechanism is proposed and model is developed to explain these results. (C) 2003 Elsevier B.V. All rights reserved. References: 33