Properties of a highhyphen;resistivity layer in epitaxially grown gallium arsenide film

摘要

In the highhyphen;resistivity layer of vaporhyphen;phase epitaxial GaAs films grown under the condition of relatively low arsenic vapor pressure, various interesting properties were found, such as (i) a large PTCR (positive temperature coefficient of resistivity), (ii) large photoconductivity, and (iii) currenthyphen;controlled negative resistance. A possible explanation is presented.