Application of photodeposited Cd to Schottky barrier diode and transistor fabrication on InP and In0.53Ga0.47As substrates

摘要

We report on using a thin (sim;200 Aring;) layer of photodeposited Cd to form high Schottky barrier height contacts to InP and In0.53Ga0.47As. Currenthyphen;voltage measurements of the Schottky diodes yield barrier heights of 0.70 and 0.55 eV to InP and In0.53Ga0.47As, respectively. The photodeposition process has been integrated with conventional clean room processing to fabricate Au/Cd/In0.53Ga0.47As transistors with high transconductances (sim;200 mS/mm) and operating frequencies (thinsp;fmaxsim;30 GHz). Xhyphen;ray photoelectron spectroscopy of thin Cd photodeposits on InP shows that the process produces an interfacial (sim;10 Aring; thick) Cdhyphen;InP reaction zone covered by metallic Cd.