Wave function sweeping in AlxGa1minus;xAshyphen;GaAs quantum wells

摘要

Specially tailored gated AlxGa1minus;xAshyphen;GaAs quantum well (QW) structures have been prepared, where it is possible to sweep the maximum of the electron wave function and, thus, the electron density via the gate voltage very effectively from the substrate side of the QW to the front side. In our structure this sweeping is so pronounced that it leads to a unique influence on the actual band structure and cyclotron resonance mass.