Measurement of the conductionhyphen;band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,Nhyphen;nheterojunction byChyphen;Vprofiling

摘要

We report the first measurement of the conductionhyphen;band discontinuity Dgr;Ecfor molecular beam epitaxial grownNhyphen;nIn0.52Al0.48As/In0.53Ga0.47As heterojunction using theChyphen;Vprofiling technique outlined by Kroemeretal. We find Dgr;Ec=(0.50plusmn;0.05) eV at;297thinsp;K corresponding to (71plusmn;7)percnt; Dgr;Eg. An interface charge density sgr;iof (4.0plusmn;0.8)times;1011cmminus;2was also obtained. A knowledge of Dgr;Ecis of importance for quantifying carrier confinement in double heterostructure lasers fabricated from these ternary compounds.