We present a study of the bottom interface (GaAs on AlAs) in GaAs/AlAs single quantum wells using reflection highhyphen;energy electron diffraction, luminescence, and luminescence excitation spectroscopy. The results indicate that it is possible to grow GaAs/AlAs quantum wells with two truly smooth interfaces using molecular beam epitaxy with growth interrupts. A set of samples in which the growth interrupt time on the bottom interface was changed illustrates in a systematic way the qualitative behavior possible in luminescence spectra. In particular, the energy splitting between the exciton peaks is observed to vary in the rough regime and in the truly smooth regime, although in a different way.
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