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Formation of Injecting and Blocking Contacts on Highhyphen;Resistivity Germanium

机译:Formation of Injecting and Blocking Contacts on Highhyphen;Resistivity Germanium

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The behavior of Al and Sbsol;Gesol;Sb layers evaporated on highhyphen;purity Ge and heat treated at 280 deg;C is studied by reversehyphen;recovery, doublehyphen;injection, and nuclearhyphen;particlehyphen;response techniques. The results indicate that the contacts have the injection and blocking characteristics ofphyphen; andnhyphen;type material, respectively. Backscattering measurements with 1.8hyphen;MeV4Heplus;ions show that solidhyphen;solid reactions occur.

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