We report the synthesis of high-quality graphene films on Ni foils using a cold-wall reactor by rapid thermal chemical vapor deposition (CVD). The graphene films were produced by shortening the growth time to 10 s, suggesting that a direct growth mechanism may play a larger role rather than a precipitation mechanism. A lower H2 flow rate is favorable for the growth of high-quality graphene films. The graphene film prepared without the presence of H2 has a sheet resistance as low as ~367 ohm/sq coupled with 97.3 optical trans-mittance at 550 nm wavelength, which is much better than for those grown by hot-wall CVD systems. These data suggest that the structural and electrical characteristics of these graphene films are comparable to those prepared by CVD on Cu.
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