High hydrogen concentrations produced by segregation intop+layers in silicon

摘要

Galliumhyphen;implantedp+layers in Si were exposed to atomic hydrogen from a plasma. It was found that very large hydrogen concentrations, up to 7.5 times larger than the peak Ga concentration of 7times;1019/cm3, segregated into thep+layer during treatment at 200 deg;C. The shape of the hydrogen concentration profile was similar to that of the Ga profile. Ion channeling showed that the H atoms did not occupy simple highhyphen;symmetry sites in the lattice, and electron microscopy revealed the presence of extended lcub;111rcub; stacking fault defects associated with the layer of high hydrogen concentration. A mechanism to account for these findings is suggested.