Sihyphen;BPhyphen;Si double heterojunction was obtained through the alternate growth of BP and Si on a Si substrate. After BP was grown epitaxially and then covered with Si3N4, it was heat treated at the stoichiometric temperature of 1050thinsp;deg;C. Thermal emission Ohmic current and thermal emission field current were observed for then+Si(epi)hyphen;BPhyphen;n+Si(sub) and thep+Si(epi)hyphen;BPhyphen;p+Si(sub) structures, where the BP is depleted. Analysis of the current gives the barrier height ofV0=0.4ndash;0.6 V and an electron or a hole drift mobility of mgr;=70 cm2/Vs in the BP depleted.
展开▼
