Design guideline and performance prediction of 'SBB' SOI MOSFETs

摘要

'Self-Body-Biased' ('SBB') SOI MOSFETs, in which the body bias is automatically controlled by the gate bias and the drain current, have been studied in detail. Static simulations show that the desired ratio of the off-state leakage current (I{sub}(off)) to the on state current-drivability (I{sub}(on)) can be achieved by independently changing the impurity concentration of the 'high Na' and the 'low Na' regions of 'SBB' SOI MOSFETs. Transient simulations show that the propagation delay (τ{sub}(pd)) of an 'SBB' CMOS inverter is up to 30 shortor than that fur a bulk CMOS invert or at supply voltage of 0.9 volt under a relatively heavy load condition (Wn/Wp = 1μm/2μm, Lg 0.25μm, C{sub}L=1pF).