As gate oxide thicknesses approach their useful limit, new materials are being researched to replace silicon oxide. The two most favored candidates, tantalum oxide and titanium oxide, have high defect densities intrinsic to them. Protective ceramics have greater potential, since they can be made into thin films with low defect densities. Here, some metal oxides are evaluated according to their Pilling- Bedworth ratio for suitability as gate dielectric materials.
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