A method is described for transferring deposited diamond films to a second substrate, thereby providing access to the diamond film back surface and also allowing posthyphen;deposition contact formation to both surfaces of the film. The availability of both sides of the diamond film allows increased experimental control and flexibility for investigation of electrical properties and contact phenomena. The films are deposited in a microwave plasma disk reactor onto silicon substrates and transferred to epoxy substrates. Also presented is a comparison of the roughness of the top and bottom film surfaces, a Raman spectrum of the transferred film, and currenthyphen;voltage characteristics of samples with dualhyphen;side contacts.
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