Gas source silicon molecular beam epitaxy using disilane

摘要

In gas source silicon molecular beam epitaxy (MBE) using disilane, good crystal quality silicon epitaxial films were obtained at a temperature as low as 630thinsp;deg;C. In comparison with gas source Sihyphen;MBE using silane, a growth rate several times higher was attained. Boron doping in the gas source Sihyphen;MBE was also studied. Using HBO2as the Bhyphen;doping source, the doping level was controlled in the range of 1016ndash;1018cmminus;3by the cell temperature. Because of the low growth temperature and the high growth rate, an abrupt doping profile was obtained.