Microluminescence depth profiles and annealing effects in porous silicon

摘要

Crosshyphen;sectional microluminescence measurements for 1 OHgr;thinsp;cm 70 mgr;m porous silicon samples show a continuous decrease of the photoluminescence band as a function of sample depth. No spectral shift is observed. For samples annealed at 390thinsp;deg;C, in addition to spectral intensity reduction, we observe the same redshift in all luminescence spectra independent of depth. A study of this luminescence redshift as a function of annealing temperature reveals a striking similarity to results observed for optical band gap shrinking ofahyphen;Si:H as a function of hydrogen loss during annealing.