Electrical properties of donor and acceptor implanted Hg1minus;xCdxTe following cw CO2laser annealing

摘要

The electrical properties of P and B implanted and cw CO2laser annealednhyphen; andphyphen;type Hg1minus;xCdxTe (x=0.21, 0.29) are studied. Hall, conductivity, and capacitancehyphen;voltage (Chyphen;V) measurements carried out on the virgin, implanted, and annealed samples all show that both donor and acceptor implants can be electrically activated when annealing with a cw CO2laser (0.3 s, 250 W/cm2) is employed.