Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

摘要

We have used anodization techniques to process porous surface regions inphyphen;type Czochralski Si and inphyphen;type Si0.85Ge0.15epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong nearhyphen;infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions.