In this work, a new method of AlN crystal growth is proposed. AlN powders, whiskers, and films have successfully been synthesized in the temperature range from 1200 to 1500 °C using just Al powders and nitrogen gas. The formation of AlN crystals was confirmed by x-ray diffraction. Photoluminescence spectroscopy show intense deep-level emissions, indicating a high potential of the synthesized AlN as a light emitting material. In addition, an AlN film with a thickness of only 1.38 μm can be separated from the sapphire substrate after the growth likely due to the decomposition of sapphire.
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