A twohyphen;dimensional (2D) quantum size concept is introduced here for interpreting internal photoemission phenomena. Theoretical results correspond well with published photoyield data for platinum silicide/phyphen;type silicon Schottky barrier diodes. The difference between the optical barrier height and the thermal barrier height can be physically determined by momentum conservation when photoexcited carriers transport over a Schottky barrier. Finite yield at low photon energies and rollhyphen;off at high photon energies are well characterized by the 2D quantum model.
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