Improvements of electrical and optical properties of GaAs by substrate bias application during electronhyphen;cyclotronhyphen;resonance plasmahyphen;excited molecular beam epitaxy

摘要

Electrical and optical properties of GaAs layers are improved by applying substrate bias during electronhyphen;cyclotronhyphen;resonance plasmahyphen;excited molecular beam epitaxy (ECRhyphen;MBE). The highest mobility obtained without substrate bias is 4500 cm2thinsp;Vminus;1thinsp;sminus;1. By applying positive bias, the mobility of the grown layer is increased to as high as 6800 cm2thinsp;Vminus;1thinsp;sminus;1. Intense photoluminescence spectra comparable to that of a high quality MBEhyphen;grown layer are also observed. The suppression of highhyphen;energy ion impingement on the growing surface plays an important role in obtaining high quality crystal.