Calculations of bound states in the valence band of AlAs/GaAs/AlAs and AlGaAs/GaAs/AlGaAs quantum wells

摘要

A realistic pseudopotential complex-band-structure approach to the calculation of bound states in semiconductor quantum wells is described. The method is applied to the determination of bound-state energies and charge densities in the valence band of (100) AlAs/GaAs/AlAs and Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As isolated quantum wells as functions of well width. The results suggest the existence of additional structure in the optical spectra of quantum wells at widths corresponding to regions in which there is substantial hybridisation of light- and heavy-hole bound states.