Auger and electron energyhyphen;loss study of the Al/SiC interface

摘要

Auger and electron energyhyphen;loss spectroscopies, as functions of Al coverage and annealing temperature, have been used to determine the mechanism of formation of the Al/SiC interface. Al deposited at room temperature forms quasihyphen;metallic islands randomly distributed over the surface. Annealing at moderate temperature (le;600thinsp;deg;C) causes aggregation of Al at Chyphen;rich sites. At higher temperature, Al reacts with C (but not with Si) to form Al4C3.